JY2605M Dual N Channel Enhancement Mode Power MOSFET For BLDC Motor Controller
GENERAL DESCRIPTION
The product utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
FEATURES
● 60V/50A, RDS(ON) =14mΩ@VGS=10V(typical)
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Power Switching application
● Synchronous rectification
● Motor drive for 12V-24V Systems
PIN DESCRIPTION
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit |
| VDS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Continuous Drain Current | Tc=25ºC | 50 | A |
| Tc=100ºC | 35 |
| IDM | Pulsed Drain Current | 185 | A |
| PD | Maximum Power Dissipation | 65 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | ºC |
| RθJC | Thermal Resistance-Junction to Case | 2.3 | ºC/W |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
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