‐40V/‐70A P Channel Enhancement Mode Power MOSFET JY4P7M for High Current Load
GENERAL DESCRIPTION
The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in high current
load applications.
FEATURES
● ‐40V/‐70A, RDS(ON) ≤10mΩ@VGS=‐10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Load switch in high current applications
● Power Management for Inverter Systems
PIN DESCRIPTION
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
DOWNLOAD THE USER MANUAL OF JY4P7M
