Shanghai Juyi Electronic Technology Development Co., Ltd
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JY11M N Channel Enhancement Mode Power MOSFET
GENERAL DESCRIPTION
The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.
FEATURES
● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | ± 20 | V | |
| ID | Continuous Drain Current | Tc=25ºC | 110 | A |
| Tc=100ºC | 82 | |||
| IDM | Pulsed Drain Current | 395 | A | |
| PD | Maximum Power Dissipation | 210 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 0.65 | ºC/W | |
| RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250uA | 100 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | 1 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=± 20V,VDS=0V | ± 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V,IDS=40A | 6.5 | mΩ | ||
| gFS | Forward Transconductance | VDS=50V, IDS=40A | 100 | S |
DOWNLOAD JY11M USER MANUAL